? semiconductor components industries, llc, 2002 april, 2002 rev. 1 1 publication order number: mjf44h11/d mjf44h11 (npn), mjf45h11 (pnp) preferred devices complementary power transistors for isolated package applications . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. ? low collectoremitter saturation voltage v ce(sat) = 1.0 v (max) @ 8.0 a ? fast switching speeds ? complementary pairs simplifies designs maximum ratings rating symbol value unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ??? ??? 80 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??? ??? 5 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current continuous peak ???? ? ?? ? ???? i c ??? ? ? ? ??? 10 20 ??? ? ? ? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??? ? ? ? ??? 50 1.67 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ? ?? ? ???? p d ??? ? ? ? ? ? ? ??? 2.0 0.016 ??? ? ? ? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??? ? ? ? ??? 55 to 150 ??? ? ? ? ??? c ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ??? ??? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? r q jc ??? ??? 3.5 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ???? ???? r q ja ??? ??? 62.5 ??? ??? c/w device package shipping ordering information mjf44h11 to220 isolated to220 case 221d plastic 50 units/rail 3 1 2 preferred devices are recommended choices for future use and best overall value. marking diagram f4xh11 llyww silicon power transistors 10 amperes 80 volts 50 watts f4xh11 = specific device code x = 4 or 5 ll = location code y = year ww = work week mjf45h11 to220 50 units/rail style 2: pin 1. base 2. collector 3. emitter http://onsemi.com
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (i c = 30 ma, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 80 ???? ? ?? ? ???? ???? ? ?? ? ???? ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v ceo , v be = 0) ????? ? ??? ? ????? i ces ??? ? ? ? ??? ???? ? ?? ? ???? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? m a ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 5 vdc) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ???? ? ?? ? ???? ???? ? ?? ? ???? 10 ??? ? ? ? ??? m a ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????? ??????????????????? collectoremitter saturation voltage (i c = 8 adc, i b = 0.4 adc) ????? ????? v ce(sat) ??? ??? ???? ???? ???? ???? 1.0 ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 8 adc, i b = 0.8 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ???? ? ?? ? ???? ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (v ce = 1 vdc, i c = 2 adc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 60 ???? ? ?? ? ???? ???? ? ?? ? ???? ??? ? ? ? ??? ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (v ce = 1 vdc, i c = 4 adc) ????? ? ??? ? ????? ??? ? ? ? ??? 40 ???? ? ?? ? ???? ???? ? ?? ? ???? ??? ? ? ? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? collector capacitance (v cb = 10 vdc, f test = 1 mhz) mjf44h11 mjf45h11 ????? ? ??? ? ????? c cb ??? ? ? ? ??? ???? ? ?? ? ???? 130 230 ???? ? ?? ? ???? ??? ? ? ? ??? pf ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) mjf44h11 mjf45h11 ????? ? ??? ? ? ??? ? ????? f t ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 50 40 ???? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ??? mhz ??????????????????? ??????????????????? switching times ????? ????? ??? ??? ???? ???? ???? ???? ??? ??? ??????????????????? ? ????????????????? ? ??????????????????? delay and rise times (i c = 5 adc, i b1 = 0.5 adc) mjf44h11 mjf45h11 ????? ? ??? ? ????? t d + t r ??? ? ? ? ??? ???? ? ?? ? ???? 300 135 ???? ? ?? ? ???? ??? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? storage time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjf44h11 mjf45h11 ????? ? ??? ? ? ??? ? ????? t s ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 500 500 ???? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ??? ns ??????????????????? ? ????????????????? ? ??????????????????? fall time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjf44h11 mjf45h11 ????? ? ??? ? ????? t f ??? ? ? ? ??? ???? ? ?? ? ???? 140 100 ???? ? ?? ? ???? ??? ? ? ? ??? ns
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 3 figure 1. thermal response t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z q jc(t) = r(t) r q jc r q jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01 figure 2. maximum rated forward bias safe operating area 100 1.0 v ce , collector-emitter voltage (volts) 5.0 10 t c 70 c duty cycle 50% i c , collector current (amps) 2.0 3.0 20 30 50 100 1.0 7.0 mjf44h11/mjf45h11 70 1.0 m s dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 m s 100 m s 1.0 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 3. power derating 0 t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 p d , power dissipation (watts) 0 2.0 t a 1.0 3.0 80 140 t c t a 20
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 4 i c , collector current (amps) i c , collector current (amps) i c , collector current (amps) h fe , dc current gain v ce = 4 v t j = 125 c 25 c -40 c 1000 0.1 figure 4. mjf44h11 dc current gain 10 110 100 figure 5. mjf45h11 dc current gain figure 6. mjf44h11 current gain versus temperature figure 7. mjf45h11 current gain versus temperature i c /i b = 10 t j = 25 c 0.1 figure 8. mjf44h11 onvoltages i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 t j = 25 c figure 9. mjf45h11 onvoltages v ce = 1 v i c /i b = 10 t j = 25 c 0.1 i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v i c , collector current (amps) h fe , dc current gain v ce = 4 v 1000 0.1 10 110 100 t j = 25 c 1 v t j = 125 c 25 c -40 c h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v v be(sat) v ce(sat) v be(sat) v ce(sat)
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 5 package dimensions to220 fullpak transistor case 221d02 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 6 notes
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 7 notes
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